Magnetic and structural properties of EuS for magnetic tunnel junction barriers

In view of potential applications as a spin filter in spintronic devices, we systematically studied the growth by sputtering of ferromagnetic EuS barriers. The relationship between growth and magnetic and transport properties, also in combination with magnetic and nonmagnetic materials, was investig...

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2004-06, Vol.95 (11), p.7405-7407
Main Authors: Smits, C. J. P., Filip, A. T., Kohlhepp, J. T., Swagten, H. J. M., Koopmans, B., de Jonge, W. J. M.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In view of potential applications as a spin filter in spintronic devices, we systematically studied the growth by sputtering of ferromagnetic EuS barriers. The relationship between growth and magnetic and transport properties, also in combination with magnetic and nonmagnetic materials, was investigated. We demonstrate that growth at lower substrate temperatures (200 °C), followed by an anneal step at elevated temperatures (430 °C), leads to improved magnetic and transport properties of the barrier layer. We tentatively attribute the observed low-temperature magnetoresistance of high-resistive Al/PbS/EuS/PbS/Gd devices to spin filtering.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1682931