Mn-implanted dilute magnetic semiconductor InP:Mn

Unintentionally doped bulk InP was prepared by the liquid encapsulated Czochralski method and subsequently implanted with various doses of Mn+. The properties of Mn+-implanted InP:Mn were investigated by various measurements. The results of energy dispersive x-ray peaks displayed injected concentrat...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2004-03, Vol.84 (13), p.2310-2312
Main Authors: Shon, Yoon, Lee, W. C., Park, Y. S., Kwon, Y. H., Lee, Seung Joo, Chung, K. J., Kim, H. S., Kim, D. Y., Fu, D. J., Kang, T. W., Fan, X. J., Park, Y. J., Oh, H. T.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Unintentionally doped bulk InP was prepared by the liquid encapsulated Czochralski method and subsequently implanted with various doses of Mn+. The properties of Mn+-implanted InP:Mn were investigated by various measurements. The results of energy dispersive x-ray peaks displayed injected concentrations of Mn of 0.8% and 8.8%, respectively. The results of photoluminescence (PL) measurement showed that optical broad transitions related to Mn appeared near 1.089, 1.144, and 1.185 eV in samples with various doses of Mn+. It was confirmed that the photoluminescence peaks near 1.089, 1.144, and 1.185 eV were Mn-correlated PL bands by the implantation of Mn. Ferromagnetic hysteresis loops measured at 10 K were observed and the temperature-dependent magnetization showed ferromagnetic behavior around 90 K, which almost agreed with the theoretical prediction (Tc∼70 K).
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1690875