Mn-implanted dilute magnetic semiconductor InP:Mn

Unintentionally doped bulk InP was prepared by the liquid encapsulated Czochralski method and subsequently implanted with various doses of Mn+. The properties of Mn+-implanted InP:Mn were investigated by various measurements. The results of energy dispersive x-ray peaks displayed injected concentrat...

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Published in:Applied physics letters 2004-03, Vol.84 (13), p.2310-2312
Main Authors: Shon, Yoon, Lee, W. C., Park, Y. S., Kwon, Y. H., Lee, Seung Joo, Chung, K. J., Kim, H. S., Kim, D. Y., Fu, D. J., Kang, T. W., Fan, X. J., Park, Y. J., Oh, H. T.
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cited_by cdi_FETCH-LOGICAL-c260t-afe799c85012d075668699952b6115d39dc602e5fc712d8591457ff0e9c38f693
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container_end_page 2312
container_issue 13
container_start_page 2310
container_title Applied physics letters
container_volume 84
creator Shon, Yoon
Lee, W. C.
Park, Y. S.
Kwon, Y. H.
Lee, Seung Joo
Chung, K. J.
Kim, H. S.
Kim, D. Y.
Fu, D. J.
Kang, T. W.
Fan, X. J.
Park, Y. J.
Oh, H. T.
description Unintentionally doped bulk InP was prepared by the liquid encapsulated Czochralski method and subsequently implanted with various doses of Mn+. The properties of Mn+-implanted InP:Mn were investigated by various measurements. The results of energy dispersive x-ray peaks displayed injected concentrations of Mn of 0.8% and 8.8%, respectively. The results of photoluminescence (PL) measurement showed that optical broad transitions related to Mn appeared near 1.089, 1.144, and 1.185 eV in samples with various doses of Mn+. It was confirmed that the photoluminescence peaks near 1.089, 1.144, and 1.185 eV were Mn-correlated PL bands by the implantation of Mn. Ferromagnetic hysteresis loops measured at 10 K were observed and the temperature-dependent magnetization showed ferromagnetic behavior around 90 K, which almost agreed with the theoretical prediction (Tc∼70 K).
doi_str_mv 10.1063/1.1690875
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title Mn-implanted dilute magnetic semiconductor InP:Mn
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