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Compression of Ti3Si0.5Ge0.5C2 to 53 GPa
Using a synchrotron radiation source and a diamond anvil cell, we measured the pressure dependence of the lattice parameters of a polycrystalline Ti3Si0.5Ge0.5C2 sample. Up to a pressure of 53 GPa, no phase transformations were observed. As for the isostructural hexagonal Ti3SiC2, the compressibilit...
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Published in: | Applied physics letters 2004-04, Vol.84 (15), p.2799-2801 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Using a synchrotron radiation source and a diamond anvil cell, we measured the pressure dependence of the lattice parameters of a polycrystalline Ti3Si0.5Ge0.5C2 sample. Up to a pressure of 53 GPa, no phase transformations were observed. As for the isostructural hexagonal Ti3SiC2, the compressibility along the c axis was greater than along a. The bulk modulus is 183±4 GPa with a pressure derivative of 3.4±0.2. This work shows that the replacement of Si by Ge in Ti3SiC2 results in a systematic decrease in the bulk moduli. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1699477 |