Electrical Properties and Resonance Scattering in Heavily Doped n -Type GaSb and Related Semiconductors

Data are presented of the resistivity ρ and Hall coefficient RH vs temperature T from 4.2°K to room temperature for seven n-type moderately heavily Te-doped samples of GaSb. The ρ-vs-T curve shapes are similar at low temperatures to those previously measured on n-GaAs and n-InAs, and they are presum...

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Bibliographic Details
Published in:Journal of applied physics 1965-11, Vol.36 (11), p.3436-3439
Main Authors: Long, Donald, Hager, Robert J.
Format: Article
Language:English
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Summary:Data are presented of the resistivity ρ and Hall coefficient RH vs temperature T from 4.2°K to room temperature for seven n-type moderately heavily Te-doped samples of GaSb. The ρ-vs-T curve shapes are similar at low temperatures to those previously measured on n-GaAs and n-InAs, and they are presumably caused by the same near-resonance scattering mechanism as proposed earlier to explain the n-GaAs and n-InAs results. An unusual rise in the low-temperature mobility with increasing carrier concentration in the n-GaSb samples can also apparently be understood on the basis of the near-resonance scattering model.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1703012