Effects of electron concentration on the optical absorption edge of InN

InN films with free electron concentrations ranging from mid-1017 to mid-1020 cm−3 have been studied using optical absorption, Hall effect, and secondary ion mass spectrometry. The optical absorption edge covers a wide energy range from the intrinsic band gap of InN of about 0.7 to about 1.7 eV whic...

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Bibliographic Details
Published in:Applied physics letters 2004-04, Vol.84 (15), p.2805-2807
Main Authors: Wu, J., Walukiewicz, W., Li, S. X., Armitage, R., Ho, J. C., Weber, E. R., Haller, E. E., Lu, Hai, Schaff, William J., Barcz, A., Jakiela, R.
Format: Article
Language:English
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Summary:InN films with free electron concentrations ranging from mid-1017 to mid-1020 cm−3 have been studied using optical absorption, Hall effect, and secondary ion mass spectrometry. The optical absorption edge covers a wide energy range from the intrinsic band gap of InN of about 0.7 to about 1.7 eV which is close to the previously accepted band gap of InN. The electron concentration dependence of the optical absorption edge energy is fully accounted for by the Burstein–Moss shift. Results of secondary ion mass spectrometry measurements indicate that O and H impurities cannot fully account for the free electron concentration in the films.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1704853