Whisker Crystals of Gallium Arsenide and Gallium Phosphide Grown by the Vapor—Liquid—Solid Mechanism

GaAs and GaP whisker crystals have been grown by the vapor—liquid—solid mechanism of crystal growth. Gold, palladium, platinum, and gallium have been used to produce the required liquid layer. The system employing wet hydrogen developed by Frosch and Thurmond was used for most of the crystal growing...

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Published in:Journal of applied physics 1965-07, Vol.36 (7), p.2296-2301
Main Authors: Barns, R. L., Ellis, W. C.
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Language:English
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Ellis, W. C.
description GaAs and GaP whisker crystals have been grown by the vapor—liquid—solid mechanism of crystal growth. Gold, palladium, platinum, and gallium have been used to produce the required liquid layer. The system employing wet hydrogen developed by Frosch and Thurmond was used for most of the crystal growing. p- and n-type crystals were produced. GaAs crystals were found to have three morphologies: a twinned ribbon with a 〈112〉 growth direction and {111}, {110}, and {113} lateral faces; a single-crystal hexagonal needle with a 〈111〉 growth direction and {110} lateral faces; and a newly found habit, a single-crystal blade which grows in an 〈001〉 direction with {110} lateral faces. The largest GaAs blades were about 8×0.3 ×0.010 mm and grew at a rate of about 1 mm/h. The twinned ribbon and the 〈001〉, {110} morphologies were found in GaP.
doi_str_mv 10.1063/1.1714466
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1714466</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1714466</sourcerecordid><originalsourceid>FETCH-LOGICAL-c293t-a71081925918bee4679e82119e06d6f7f45bf79e75a4558d807f7dab92327b2f3</originalsourceid><addsrcrecordid>eNo9kMtKxDAYhYMoWEcXvkG2LjrmT5smWQ5FqzCi4G1Z0iah0d5MOsjsfAif0Cexg4Orc_gWH4eD0DmQJZAsuYQlcEjTLDtAERAhY84YOUQRIRRiIbk8RichvBECIBIZoea1ceHdeJz7bZhUG_BgcaHa1m06vPLB9E4brHr9Dx-aIYzNjhZ--OxxtcVTY_CLGgf_8_W9dh8bp-fyOLRO4ztTN6p3oTtFR3bWm7N9LtDz9dVTfhOv74vbfLWOayqTKVZ8Xg2SMgmiMibNuDSCAkhDMp1ZblNW2ZlxplLGhBaEW65VJWlCeUVtskAXf97aDyF4Y8vRu075bQmk3F1UQrm_KPkF3pdasw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Whisker Crystals of Gallium Arsenide and Gallium Phosphide Grown by the Vapor—Liquid—Solid Mechanism</title><source>AIP Digital Archive</source><creator>Barns, R. L. ; Ellis, W. C.</creator><creatorcontrib>Barns, R. L. ; Ellis, W. C.</creatorcontrib><description>GaAs and GaP whisker crystals have been grown by the vapor—liquid—solid mechanism of crystal growth. Gold, palladium, platinum, and gallium have been used to produce the required liquid layer. The system employing wet hydrogen developed by Frosch and Thurmond was used for most of the crystal growing. p- and n-type crystals were produced. GaAs crystals were found to have three morphologies: a twinned ribbon with a 〈112〉 growth direction and {111}, {110}, and {113} lateral faces; a single-crystal hexagonal needle with a 〈111〉 growth direction and {110} lateral faces; and a newly found habit, a single-crystal blade which grows in an 〈001〉 direction with {110} lateral faces. The largest GaAs blades were about 8×0.3 ×0.010 mm and grew at a rate of about 1 mm/h. The twinned ribbon and the 〈001〉, {110} morphologies were found in GaP.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.1714466</identifier><language>eng</language><ispartof>Journal of applied physics, 1965-07, Vol.36 (7), p.2296-2301</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c293t-a71081925918bee4679e82119e06d6f7f45bf79e75a4558d807f7dab92327b2f3</citedby><cites>FETCH-LOGICAL-c293t-a71081925918bee4679e82119e06d6f7f45bf79e75a4558d807f7dab92327b2f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Barns, R. L.</creatorcontrib><creatorcontrib>Ellis, W. C.</creatorcontrib><title>Whisker Crystals of Gallium Arsenide and Gallium Phosphide Grown by the Vapor—Liquid—Solid Mechanism</title><title>Journal of applied physics</title><description>GaAs and GaP whisker crystals have been grown by the vapor—liquid—solid mechanism of crystal growth. Gold, palladium, platinum, and gallium have been used to produce the required liquid layer. The system employing wet hydrogen developed by Frosch and Thurmond was used for most of the crystal growing. p- and n-type crystals were produced. GaAs crystals were found to have three morphologies: a twinned ribbon with a 〈112〉 growth direction and {111}, {110}, and {113} lateral faces; a single-crystal hexagonal needle with a 〈111〉 growth direction and {110} lateral faces; and a newly found habit, a single-crystal blade which grows in an 〈001〉 direction with {110} lateral faces. The largest GaAs blades were about 8×0.3 ×0.010 mm and grew at a rate of about 1 mm/h. The twinned ribbon and the 〈001〉, {110} morphologies were found in GaP.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1965</creationdate><recordtype>article</recordtype><recordid>eNo9kMtKxDAYhYMoWEcXvkG2LjrmT5smWQ5FqzCi4G1Z0iah0d5MOsjsfAif0Cexg4Orc_gWH4eD0DmQJZAsuYQlcEjTLDtAERAhY84YOUQRIRRiIbk8RichvBECIBIZoea1ceHdeJz7bZhUG_BgcaHa1m06vPLB9E4brHr9Dx-aIYzNjhZ--OxxtcVTY_CLGgf_8_W9dh8bp-fyOLRO4ztTN6p3oTtFR3bWm7N9LtDz9dVTfhOv74vbfLWOayqTKVZ8Xg2SMgmiMibNuDSCAkhDMp1ZblNW2ZlxplLGhBaEW65VJWlCeUVtskAXf97aDyF4Y8vRu075bQmk3F1UQrm_KPkF3pdasw</recordid><startdate>19650701</startdate><enddate>19650701</enddate><creator>Barns, R. L.</creator><creator>Ellis, W. C.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19650701</creationdate><title>Whisker Crystals of Gallium Arsenide and Gallium Phosphide Grown by the Vapor—Liquid—Solid Mechanism</title><author>Barns, R. L. ; Ellis, W. C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c293t-a71081925918bee4679e82119e06d6f7f45bf79e75a4558d807f7dab92327b2f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1965</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Barns, R. L.</creatorcontrib><creatorcontrib>Ellis, W. C.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Barns, R. L.</au><au>Ellis, W. C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Whisker Crystals of Gallium Arsenide and Gallium Phosphide Grown by the Vapor—Liquid—Solid Mechanism</atitle><jtitle>Journal of applied physics</jtitle><date>1965-07-01</date><risdate>1965</risdate><volume>36</volume><issue>7</issue><spage>2296</spage><epage>2301</epage><pages>2296-2301</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>GaAs and GaP whisker crystals have been grown by the vapor—liquid—solid mechanism of crystal growth. Gold, palladium, platinum, and gallium have been used to produce the required liquid layer. The system employing wet hydrogen developed by Frosch and Thurmond was used for most of the crystal growing. p- and n-type crystals were produced. GaAs crystals were found to have three morphologies: a twinned ribbon with a 〈112〉 growth direction and {111}, {110}, and {113} lateral faces; a single-crystal hexagonal needle with a 〈111〉 growth direction and {110} lateral faces; and a newly found habit, a single-crystal blade which grows in an 〈001〉 direction with {110} lateral faces. The largest GaAs blades were about 8×0.3 ×0.010 mm and grew at a rate of about 1 mm/h. The twinned ribbon and the 〈001〉, {110} morphologies were found in GaP.</abstract><doi>10.1063/1.1714466</doi><tpages>6</tpages></addata></record>
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1089-7550
language eng
recordid cdi_crossref_primary_10_1063_1_1714466
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title Whisker Crystals of Gallium Arsenide and Gallium Phosphide Grown by the Vapor—Liquid—Solid Mechanism
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T16%3A26%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Whisker%20Crystals%20of%20Gallium%20Arsenide%20and%20Gallium%20Phosphide%20Grown%20by%20the%20Vapor%E2%80%94Liquid%E2%80%94Solid%20Mechanism&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Barns,%20R.%20L.&rft.date=1965-07-01&rft.volume=36&rft.issue=7&rft.spage=2296&rft.epage=2301&rft.pages=2296-2301&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.1714466&rft_dat=%3Ccrossref%3E10_1063_1_1714466%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c293t-a71081925918bee4679e82119e06d6f7f45bf79e75a4558d807f7dab92327b2f3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true