Stable, High Field Silicon p‐n Junction Radiation Detectors

The geometrical control of a reverse--bias--created depletion region at the surface of a p-n junction by the physical removal of bulk charge is discussed. By the resulting bevel or surface contour, the space charge region is controllably distorted or spread out at the surface resulting in a lower su...

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Bibliographic Details
Published in:Review of scientific instruments 1963-01, Vol.34 (11), p.1283-1285
Main Authors: Huth, G. C., Bergeson, H. E., Trice, J. B.
Format: Article
Language:English
Subjects:
CONFIGURATION
EFFICIENCY
ELECTRIC CHARGES
ELECTRIC CONDUCTIVITY
INSTRUMENTATION
POWER
RADIATION DETECTORS
RESOLUTION
SEMICONDUCTORS
SURFACES
TEMPERATURE
USES
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Summary:The geometrical control of a reverse--bias--created depletion region at the surface of a p-n junction by the physical removal of bulk charge is discussed. By the resulting bevel or surface contour, the space charge region is controllably distorted or spread out at the surface resulting in a lower surface field. Two silicon p-n junction geometries are discussed. One is 1200 ohm-cm n- type with a 14 deg contour angle and the other is 30 ohm-cm n--type silicon with 2 to 3 deg contour angle. A resolution of 800 kev was measured at 100 deg C indicating possible high--temperature uses. (R.E.U.)
ISSN:0034-6748
1089-7623
DOI:10.1063/1.1718221