Thermoelectric Power and Electrical Resistivity of Dilute Alloys of Silicon in Copper, Nickel, and Iron

• Published in: Journal of applied physics 1955-04, Vol.26 (4), p.377-380
• Main Authors: Domenicali, C. A., Otter, F. A.
• Format: Article
• Language: English
• ISSN: 0021-8979; 1089-7550
• DOI: 10.1063/1.1722001

Data are given on the thermoelectric power and on the resistivity of the dilute alloys, Cu–Si, Ni–Si, and Fe–Si, from −195° to +500°C (and higher for some of the alloys). The Cu–Si thermopower at first decreases with increasing Si content and then again increases, the minimum being at about 2 or 3 atomic percent Si, depending on the temperature. The Cu–Si resistivity is typical of Cu-base alloys, the resistivity increases per atomic percent Si changing from 7.2 μΩ cm at −190°C to 8.7 μΩ cm at 840°C. The thermopower and resistivity curves for Ni–Si show a characteristic knick at the Curie temperature of each alloy. The Fe–Si thermopowers are positive at lower temperatures and become negative at a temperature T0 which decreases with increasing Si content. Furthermore, T0 changes from about 300°C for pure iron to about +70°C for 2 atomic percent Si. The resistivity of Fe–Si alloys increases faster than linearly with temperature, and this is also the case for the Ni–Si alloys below the Curie temperature. Above the Curie temperature, the Ni–Si resistivities vary linearly with temperature. The increase in resistivity per atomic percent Si in Fe is 10.5 μΩ cm at all temperatures within the measured range.