Very high spin polarization in GaAs by injection from a (Ga,Mn)As Zener diode

We demonstrate an electrically injected electron spin polarization in GaAs of 80% at 4.6 K by interband tunneling from the valence band of (Ga,Mn)As into an (Al,Ga)As light-emitting diode. The polarization is analyzed by the oblique Hanle effect and vanishes at 120 K, the Curie temperature of the (G...

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Bibliographic Details
Published in:Applied physics letters 2004-05, Vol.84 (18), p.3495-3497
Main Authors: Van Dorpe, P., Liu, Z., Van Roy, W., Motsnyi, V. F., Sawicki, M., Borghs, G., De Boeck, J.
Format: Article
Language:English
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Summary:We demonstrate an electrically injected electron spin polarization in GaAs of 80% at 4.6 K by interband tunneling from the valence band of (Ga,Mn)As into an (Al,Ga)As light-emitting diode. The polarization is analyzed by the oblique Hanle effect and vanishes at 120 K, the Curie temperature of the (Ga,Mn)As injector. The temperature and the bias dependence of the polarization are explained in terms of the properties of the (Ga,Mn)As/GaAs diode.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1738515