Near-bandedge cathodoluminescence of an AlN homoepitaxial film

Cathodoluminescence experiments were performed on a high-quality AlN epitaxial film grown by organometallic vapor phase epitaxy on a large single crystal AlN substrate. The low-temperature near-bandedge spectra clearly show six very narrow lines. The thermal quenching behavior of these emission line...

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Bibliographic Details
Published in:Applied physics letters 2004-05, Vol.84 (18), p.3501-3503
Main Authors: Silveira, E., Freitas, J. A., Kneissl, M., Treat, D. W., Johnson, N. M., Slack, G. A., Schowalter, L. J.
Format: Article
Language:English
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Summary:Cathodoluminescence experiments were performed on a high-quality AlN epitaxial film grown by organometallic vapor phase epitaxy on a large single crystal AlN substrate. The low-temperature near-bandedge spectra clearly show six very narrow lines. The thermal quenching behavior of these emission lines provides insight on how to assign them to free and bound exciton recombination processes. The binding energy for the free-exciton-A in AlN was found to be nearly twice that in GaN. The observation of the free-exciton-A first excited state permitted us to estimate its reduced effective mass and, by using recent reported values for the hole effective mass in Mg-doped AlN, the electron effective mass in AlN has been deduced.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1738929