Atomic layer deposition of lanthanum aluminum oxide nano-laminates for electrical applications

Lanthanum aluminum oxide thin films were grown by atomic layer deposition from a lanthanum precursor, tris(N,N′-diisopropylacetamidinato)lanthanum (La(iPrAMD)3), trimethylaluminum and water. Smooth, amorphous films having compositions La0.5Al1.5O3 and La0.9Al1.1O3 were deposited on HF-last silicon a...

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Bibliographic Details
Published in:Applied physics letters 2004-05, Vol.84 (20), p.3957-3959
Main Authors: Lim, Booyong S., Rahtu, Antti, de Rouffignac, Philippe, Gordon, Roy G.
Format: Article
Language:English
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Summary:Lanthanum aluminum oxide thin films were grown by atomic layer deposition from a lanthanum precursor, tris(N,N′-diisopropylacetamidinato)lanthanum (La(iPrAMD)3), trimethylaluminum and water. Smooth, amorphous films having compositions La0.5Al1.5O3 and La0.9Al1.1O3 were deposited on HF-last silicon and characterized without postdeposition annealing. The films contained less than 1 at. % of carbon according to Rutherford backstattering spectrometry and secondary ion mass spectrometry. A thin (9.8 nm) film showed low leakage current (
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1739272