Field-induced nonequilibrium electron distribution and electron transport in a high-quality InN thin film grown on GaN

Nonequilibrium electron transport in a high-quality, single-crystal, wurtzite structure InN thin film grown on GaN has been investigated by picosecond Raman spectroscopy. Our experimental results show that an electron drift velocity as high as (5.0±0.5)×107 cm/s can be achieved at T=300 K. The exper...

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Bibliographic Details
Published in:Applied physics letters 2004-05, Vol.84 (18), p.3681-3683
Main Authors: Liang, W., Tsen, K. T., Ferry, D. K., Lu, Hai, Schaff, William J.
Format: Article
Language:English
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Summary:Nonequilibrium electron transport in a high-quality, single-crystal, wurtzite structure InN thin film grown on GaN has been investigated by picosecond Raman spectroscopy. Our experimental results show that an electron drift velocity as high as (5.0±0.5)×107 cm/s can be achieved at T=300 K. The experimental results have been compared with ensemble Monte Carlo simulations and good agreement is obtained. From the comparison, we have also deduced that the built-in electric-field intensity inside our InN thin-film system is about 75 kV/cm.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1739509