Temperature stability of the refractive index and the direct bandedge in TlInGaAs quaternary alloys

TlInGaAs quaternary alloy layers were grown on InP substrates by gas-source molecular-beam epitaxy. Refractive index dispersions were determined at the temperature range of 300–340 K in the photon-energy region below and a little above the direct bandedge E0 by the optical reflectance measurements....

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Published in:Applied physics letters 2004-05, Vol.84 (21), p.4212-4214
Main Authors: Imada, A., Lee, H.-J., Fujiwara, A., Mukai, T., Hasegawa, S., Asahi, H.
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Language:English
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container_issue 21
container_start_page 4212
container_title Applied physics letters
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creator Imada, A.
Lee, H.-J.
Fujiwara, A.
Mukai, T.
Hasegawa, S.
Asahi, H.
description TlInGaAs quaternary alloy layers were grown on InP substrates by gas-source molecular-beam epitaxy. Refractive index dispersions were determined at the temperature range of 300–340 K in the photon-energy region below and a little above the direct bandedge E0 by the optical reflectance measurements. The temperature dependence of the refractive index was analyzed with the first-order Sellmeier equation. The temperature dependence of the E0 edge was also determined by the absorption measurements. It was found that the temperature coefficients of both refractive index and E0 edge of TlInGaAs are much smaller than those for InGaAs. These results facilitate the fabrication of the temperature-stable-wavelength optoelectronic devices using this alloy system.
doi_str_mv 10.1063/1.1755415
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title Temperature stability of the refractive index and the direct bandedge in TlInGaAs quaternary alloys
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