Well-behaved metal–oxide–semiconductor capacitor characteristics of hafnium silicate films deposited in an atomic layer deposition mode by vapor–liquid hybrid deposition process

We report electrical properties of hafnium silicate films prepared in an atomic layer deposition mode using Hf(OtC4H9)4 and Si(OC2H5)4 precursors. Film deposition was carried out at room temperature using the vapor–liquid hybrid deposition technique. The C–V curve of the metal–oxide–semiconductor ca...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2004-06, Vol.84 (25), p.5097-5099
Main Authors: Xuan, Y., Hojo, D., Yasuda, T.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report electrical properties of hafnium silicate films prepared in an atomic layer deposition mode using Hf(OtC4H9)4 and Si(OC2H5)4 precursors. Film deposition was carried out at room temperature using the vapor–liquid hybrid deposition technique. The C–V curve of the metal–oxide–semiconductor capacitor fabricated by postdeposition anneal and Au electrode evaporation shows good agreement with the theoretical one except for a positive flatband voltage shift of 0.2–0.3 V. The leakage current density was four orders of magnitude lower than SiO2 reference data in the equivalent-oxide-thickness range of
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1762977