Threshold voltage change due to organic-inorganic interface in pentacene thin-film transistors

We have constructed pentacene-based organic thin-film transistors (OTFTs) using 270nm thick Al2O3+x gate dielectric deposited on indium tin oxide glass. Two different deposition techniques have been employed for the solid pentacene channel of our OTFTs: traditional thermal evaporation (TE) and energ...

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Published in:Journal of applied physics 2004-08, Vol.96 (4), p.2301-2304
Main Authors: Lee, Jiyoul, Kim, J. H., Im, Seongil, Jung, Duk-Young
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Language:English
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description We have constructed pentacene-based organic thin-film transistors (OTFTs) using 270nm thick Al2O3+x gate dielectric deposited on indium tin oxide glass. Two different deposition techniques have been employed for the solid pentacene channel of our OTFTs: traditional thermal evaporation (TE) and energetic cluster evaporation (ECE). The TE-deposited pentacene channel appeared superior to the ECE-deposited pentacene in regard to crystallinity and hole mobility. However, the ECE-prepared OTFT showed an earlier turn on with smaller threshold voltage than the TE-prepared OTFT. This threshold voltage shift appeared more prominent with proper chemical treatment on the surface of our Al2O3+x gate oxide.
doi_str_mv 10.1063/1.1767617
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title Threshold voltage change due to organic-inorganic interface in pentacene thin-film transistors
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