Method for the determination of the capture cross sections of electrons from space-charge-limited conduction in the dark and under illumination in amorphous semiconductors

The current transport equations describing space-charge-limited conduction in the dark and under illumination in amorphous materials have been studied. With a certain number of reasonable approximations, a very simple relation in the form Y = s v X is obtained where Y and X are two quantities direct...

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Published in:Applied physics letters 2004-07, Vol.85 (2), p.245-247
Main Authors: Meaudre, R., Meaudre, M.
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Language:English
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description The current transport equations describing space-charge-limited conduction in the dark and under illumination in amorphous materials have been studied. With a certain number of reasonable approximations, a very simple relation in the form Y = s v X is obtained where Y and X are two quantities directly linked to the values of dark currents and photocurrents measured at two different voltages and s v is the product of capture cross section of states near the Fermi level and thermal velocity of carriers. The model is then applied to n + - i - n + hydrogenated amorphous and polymorphous structures.
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title Method for the determination of the capture cross sections of electrons from space-charge-limited conduction in the dark and under illumination in amorphous semiconductors
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