Electroluminescence at 7 terahertz from phosphorus donors in silicon

Terahertz (THz) emissions corresponding to intracenter transitions of phosphorus impurities in silicon have been observed up to 30 K . Electrical pulses ( 250 ns ) with a repetition rate of 413 Hz were used for excitation, and the peak power was calculated to be ∼ 20 μ W ∕ facet for a 190 × 120 μ m...

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Bibliographic Details
Published in:Applied physics letters 2004-07, Vol.85 (1), p.22-24
Main Authors: Lv, P.-C., Troeger, R. T., Adam, T. N., Kim, S., Kolodzey, J., Yassievich, I. N., Odnoblyudov, M. A., Kagan, M. S.
Format: Article
Language:English
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Summary:Terahertz (THz) emissions corresponding to intracenter transitions of phosphorus impurities in silicon have been observed up to 30 K . Electrical pulses ( 250 ns ) with a repetition rate of 413 Hz were used for excitation, and the peak power was calculated to be ∼ 20 μ W ∕ facet for a 190 × 120 μ m 2 device with a peak pumping current of 400 mA at 12 K . THz emission intensity increased linearly with pumping current and quenched when the sample temperature was above 30 K . The current-voltage characteristics suggested a conduction and excitation mechanism by injection of electrons from a Schottky barrier followed by impact ionization of the neutral impurities.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1769589