Analysis and determination of the stress-optic coefficients of thin single crystal silicon samples

This paper summarizes the analysis of the influence of anisotropy on the stress-optic coefficients and the determination of the stress-optic tensor components π11−π12 and π44 using an infrared polariscope and calibration with four-point bending of thin silicon samples. Values obtained are π11−π12=9....

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Bibliographic Details
Published in:Journal of applied physics 2004-09, Vol.96 (6), p.3103-3109
Main Authors: He, S., Zheng, T., Danyluk, S.
Format: Article
Language:English
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Summary:This paper summarizes the analysis of the influence of anisotropy on the stress-optic coefficients and the determination of the stress-optic tensor components π11−π12 and π44 using an infrared polariscope and calibration with four-point bending of thin silicon samples. Values obtained are π11−π12=9.88×10−13Pa−1 and π44=6.50×10−13Pa−1. A fringe multiplier was also introduced to increase the sensitivity of the infrared polariscope by up to seven times.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1774259