Band offset at the CuGaSe2∕In2S3 heterointerface

We have investigated the electronic properties of the CuGaSe2∕In2S3 heterointerface by photoelectron spectroscopy. In2S3 was evaporated by physical vapor deposition onto contamination free polycrystalline CuGaSe2 surface prepared by the selenium decapping process. A valence band offset ΔEVB=0.78±0.1...

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Bibliographic Details
Published in:Applied physics letters 2004-08, Vol.85 (6), p.961-963
Main Authors: Schulmeyer, T., Klein, A., Kniese, R., Powalla, M.
Format: Article
Language:English
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Summary:We have investigated the electronic properties of the CuGaSe2∕In2S3 heterointerface by photoelectron spectroscopy. In2S3 was evaporated by physical vapor deposition onto contamination free polycrystalline CuGaSe2 surface prepared by the selenium decapping process. A valence band offset ΔEVB=0.78±0.1 has been determined.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1779340