Modified metal-induced lateral crystallization using amorphous Ge∕Si layered structure

Modified metal-induced lateral crystallization (MILC) using a-Ge∕a-Si∕Ni∕SiO2 layered structures has been investigated. MILC growth velocity in the a-Ge∕a-Si layered structures was enhanced by three times compared with that in the a-Si single layers. As a result, poly-Si films with large areas (∼10μ...

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Bibliographic Details
Published in:Applied physics letters 2004-08, Vol.85 (6), p.899-901
Main Authors: Kanno, Hiroshi, Kenjo, Atsushi, Sadoh, Taizoh, Miyao, Masanobu
Format: Article
Language:English
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Summary:Modified metal-induced lateral crystallization (MILC) using a-Ge∕a-Si∕Ni∕SiO2 layered structures has been investigated. MILC growth velocity in the a-Ge∕a-Si layered structures was enhanced by three times compared with that in the a-Si single layers. As a result, poly-Si films with large areas (∼10μm) were obtained in a short time annealing (
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1780595