Thermal and Electrical Transport in InAs-GaAs Alloys

The thermal conductivity, Seebeck coefficient, and electrical resistivity have been measured as a function of temperature for various impurity concentrations and alloy compositions. Room-temperature measurements of Hall mobility and the optical determination of electron effective masses have been ma...

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Published in:Journal of applied physics 1966-06, Vol.37 (7), p.2879-2887
Main Authors: Hockings, E. F., Kudman, I., Seidel, T. E., Schmelz, C. M., Steigmeier, E. F.
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Language:English
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description The thermal conductivity, Seebeck coefficient, and electrical resistivity have been measured as a function of temperature for various impurity concentrations and alloy compositions. Room-temperature measurements of Hall mobility and the optical determination of electron effective masses have been made. n-type alloys between 50 and 70 mole % InAs, doped with selenium to give room-temperature resistivities of 4 to 8×10−4Ω·cm, give an optimum figure of merit. The maximum figure of merit at 700°K was measured to be 0.98×10−3 deg−1· p-type alloys (30%–70% InAs) doped with zinc gave a maximum figure of merit of only 0.4×10−3 deg−1 at 700°K. The room-temperature Hall mobilities and Seebeck coefficients of the p-type alloys are lower than might be anticipated. The electron effective masses were found to vary uniformly with composition.
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title Thermal and Electrical Transport in InAs-GaAs Alloys
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