Ambipolar light-emitting organic field-effect transistor

We demonstrate a light-emitting organic field-effect transistor (OFET) with pronounced ambipolar current characteristics. The ambipolar transport layer is a coevaporated thin film of α -quinquethiophene ( α - 5 T ) as hole-transport material and N , N ′ -ditridecylperylene-3,4,9,10-tetracarboxylic d...

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Bibliographic Details
Published in:Applied physics letters 2004-08, Vol.85 (9), p.1613-1615
Main Authors: Rost, Constance, Karg, Siegfried, Riess, Walter, Loi, Maria Antonietta, Murgia, Mauro, Muccini, Michele
Format: Article
Language:English
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Summary:We demonstrate a light-emitting organic field-effect transistor (OFET) with pronounced ambipolar current characteristics. The ambipolar transport layer is a coevaporated thin film of α -quinquethiophene ( α - 5 T ) as hole-transport material and N , N ′ -ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) as electron-transport material. The light intensity is controlled by both the drain-source voltage V D S and the gate voltage V G . Moreover, the latter can be used to adjust the charge-carrier balance. The device structure serves as a model system for ambipolar light-emitting OFETs and demonstrates the general concept of adjusting electron and hole mobilities by coevaporation of two different organic semiconductors.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1785290