InGaAs -on- Si single photon avalanche photodetectors

In this letter, an InGaAs -on- Si single photon avalanche diode (SPAD) for telecommunication wavelengths is presented. This SPAD demonstrates high-single-photon quantum efficiency and low-dark-count probability under gated mode operation. We attributed the good performance of this device to the high...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2004-09, Vol.85 (10), p.1668-1670
Main Authors: Kang, Y., Lo, Y.-H., Bitter, M., Kristjansson, S., Pan, Z., Pauchard, A.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this letter, an InGaAs -on- Si single photon avalanche diode (SPAD) for telecommunication wavelengths is presented. This SPAD demonstrates high-single-photon quantum efficiency and low-dark-count probability under gated mode operation. We attributed the good performance of this device to the high absorption coefficient of InGaAs and low noise avalanche multiplication of Si .
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1788882