Positional control of self-assembled quantum dots by patterning nanoscale SiN islands

We propose a method for obtaining position-controlled self-assembled quantum dots. The self-assembled InGaAs quantum dots are grown on a GaAs (311) B substrate on which SiN islands have been patterned using a nanolithographic technique. The SiN pattern determines the position of the quantum dots as...

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Bibliographic Details
Published in:Applied physics letters 2004-10, Vol.85 (14), p.2836-2838
Main Authors: Gotoh, H., Kamada, H., Saitoh, T., Shigemori, S., Temmyo, J.
Format: Article
Language:English
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Summary:We propose a method for obtaining position-controlled self-assembled quantum dots. The self-assembled InGaAs quantum dots are grown on a GaAs (311) B substrate on which SiN islands have been patterned using a nanolithographic technique. The SiN pattern determines the position of the quantum dots as well as their optical properties. The positional uniformity and photoluminescence spectrum strongly depend on the pitch of the SiN pattern. At an optimum pitch, uniformly arranged quantum dots and intense photoluminescence spectra with sharp peaks are obtained.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1804251