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White-light generation through ultraviolet-emitting diode and white-emitting phosphor

White-light-emitting diodes are fabricated by using 375 nm emitting InGaN chip with Sr 3 MgSi 2 O 8 : Eu 2 + (blue and yellow) or Sr 3 MgSi 2 O 8 : Eu 2 + , Mn 2 + (blue, yellow, and red). At a color temperature of 5892 K , the color coordinates are x = 0.32 , y = 0.33 , and the color rendering inde...

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Bibliographic Details
Published in:Applied physics letters 2004-10, Vol.85 (17), p.3696-3698
Main Authors: Kim, Jong Su, Jeon, Pyung Eun, Park, Yun Hyung, Choi, Jun Chul, Park, Hong Lee, Kim, Gwang Chul, Kim, Tae Whan
Format: Article
Language:English
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Summary:White-light-emitting diodes are fabricated by using 375 nm emitting InGaN chip with Sr 3 MgSi 2 O 8 : Eu 2 + (blue and yellow) or Sr 3 MgSi 2 O 8 : Eu 2 + , Mn 2 + (blue, yellow, and red). At a color temperature of 5892 K , the color coordinates are x = 0.32 , y = 0.33 , and the color rendering index is 84%; at a color temperature of 4494 K , the color coordinates are x = 0.35 , y = 0.33 , and the color rendering index is 92%. The blue ( 470 nm ) and yellow ( 570 nm ) emission bands are originated from Eu 2 + ions, while the red (680) emission band is originated from Mn 2 + ions in Sr 3 MgSi 2 O 8 host. The energy transfer among three bands occurs due to the spectral overlap between emission and absorption bands. It is confirmed by the faster decay time of the energy donor. Our white-light-emitting diodes show higher color reproducibility, higher color stability on forward-bias current, and excellent color rendering index in comparison with a commercial YAG : Ce 3 + -based white-light-emitting diode.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1808501