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White-light generation through ultraviolet-emitting diode and white-emitting phosphor
White-light-emitting diodes are fabricated by using 375 nm emitting InGaN chip with Sr 3 MgSi 2 O 8 : Eu 2 + (blue and yellow) or Sr 3 MgSi 2 O 8 : Eu 2 + , Mn 2 + (blue, yellow, and red). At a color temperature of 5892 K , the color coordinates are x = 0.32 , y = 0.33 , and the color rendering inde...
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Published in: | Applied physics letters 2004-10, Vol.85 (17), p.3696-3698 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | White-light-emitting diodes are fabricated by using
375
nm
emitting
InGaN
chip with
Sr
3
MgSi
2
O
8
:
Eu
2
+
(blue and yellow) or
Sr
3
MgSi
2
O
8
:
Eu
2
+
,
Mn
2
+
(blue, yellow, and red). At a color temperature of
5892
K
, the color coordinates are
x
=
0.32
,
y
=
0.33
, and the color rendering index is 84%; at a color temperature of
4494
K
, the color coordinates are
x
=
0.35
,
y
=
0.33
, and the color rendering index is 92%. The blue
(
470
nm
)
and yellow
(
570
nm
)
emission bands are originated from
Eu
2
+
ions, while the red (680) emission band is originated from
Mn
2
+
ions in
Sr
3
MgSi
2
O
8
host. The energy transfer among three bands occurs due to the spectral overlap between emission and absorption bands. It is confirmed by the faster decay time of the energy donor. Our white-light-emitting diodes show higher color reproducibility, higher color stability on forward-bias current, and excellent color rendering index in comparison with a commercial
YAG
:
Ce
3
+
-based white-light-emitting diode. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1808501 |