Transport properties of highly conductive n-type Al-rich AlxGa1−xN(x⩾0.7)

We report here the growth and transport studies of conductive n-type AlxGa1−xN alloys with high Al contents (x⩾0.7). Si-doped AlxGa1−xN alloys were grown by metalorganic chemical vapor deposition on AlN-epilayer∕sapphire substrates with very smooth surface. Low n-type resistivities have been obtaine...

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Bibliographic Details
Published in:Applied physics letters 2004-10, Vol.85 (17), p.3769-3771
Main Authors: Nakarmi, M. L., Kim, K. H., Zhu, K., Lin, J. Y., Jiang, H. X.
Format: Article
Language:English
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Summary:We report here the growth and transport studies of conductive n-type AlxGa1−xN alloys with high Al contents (x⩾0.7). Si-doped AlxGa1−xN alloys were grown by metalorganic chemical vapor deposition on AlN-epilayer∕sapphire substrates with very smooth surface. Low n-type resistivities have been obtained for Al-rich AlxGa1−xN alloys. The resistivity was observed to increase rapidly with increasing x due to the deepening of the Si donor energy level. Transport measurements have indicated that we have achieved n-type conduction in pure AlN. From the temperature dependence of the resistivity, the donor activation energy was estimated to vary from 23to180meV as x was increased from 0.7 to 1.0.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1809272