Hydrogen plasma enhancement of boron activation in shallow junctions

The ability to activate large concentrations of boron at lower temperatures is a persistent contingency in the continual drive for device scaling in Si microelectronics. We report on our experimental observations offering evidence for enhancement of electrical activation of implanted boron dopant in...

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Bibliographic Details
Published in:Applied physics letters 2004-11, Vol.85 (18), p.4052-4054
Main Authors: Vengurlekar, A., Ashok, S., Kalnas, C. E., Theodore, N. D.
Format: Article
Language:English
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Summary:The ability to activate large concentrations of boron at lower temperatures is a persistent contingency in the continual drive for device scaling in Si microelectronics. We report on our experimental observations offering evidence for enhancement of electrical activation of implanted boron dopant in the presence of atomic hydrogen in silicon. This increased electrical activity of boron at lower anneal temperature is attributed to the creation of vacancies in the boron-implanted region, lattice-relaxation caused by the presence of atomic hydrogen, and the effect of atomic hydrogen on boron-interstitial cluster formation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1811394