Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high- k gate dielectric

An alternative surface passivation process for high- k Ge metal-oxide-semiconductor (MOS) device has been studied. The surface Si H 4 annealing was implemented prior to Hf O 2 deposition. X-ray photoelectron spectroscopy analysis results show that the Si H 4 surface passivation can greatly prevent t...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2004-11, Vol.85 (18), p.4127-4129
Main Authors: Wu, Nan, Zhang, Qingchun, Zhu, Chunxiang, Chan, D. S. H., Li, M. F., Balasubramanian, N., Chin, Albert, Kwong, Dim-Lee
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:An alternative surface passivation process for high- k Ge metal-oxide-semiconductor (MOS) device has been studied. The surface Si H 4 annealing was implemented prior to Hf O 2 deposition. X-ray photoelectron spectroscopy analysis results show that the Si H 4 surface passivation can greatly prevent the formation of unstable germanium oxide at the surface and suppress the Ge out-diffusion after the Hf O 2 deposition. The electrical measurement shows that an equivalent oxide thickness of 13.5 Å and a leakage current of 1.16 × 10 − 5 A ∕ cm 2 at 1 V gate bias was achieved for Ta N ∕ Hf O 2 ∕ Ge MOS capacitors with the Si H 4 surface treatment.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1812835