Analysis of the temperature performance of type-II interband cascade lasers

The temperature performance of type-II semiconductor lasers has been analyzed by comparing the temperature-concentration dependence for a charge-carrier subsystem at the threshold with steady-state temperature-concentration relationship implied by the carrier heating process. The low material gain c...

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Bibliographic Details
Published in:Applied physics letters 2004-11, Vol.85 (19), p.4310-4312
Main Authors: Kisin, Mikhail V., Suchalkin, Sergey D., Belenky, Gregory, Bruno, John D., Tober, Richard, Luryi, Serge
Format: Article
Language:English
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Summary:The temperature performance of type-II semiconductor lasers has been analyzed by comparing the temperature-concentration dependence for a charge-carrier subsystem at the threshold with steady-state temperature-concentration relationship implied by the carrier heating process. The low material gain characteristic of type-II heterostructures and the high resistance of the thermal link to the heat sink are primarily responsible for limiting the continuous-wave laser operation to low temperatures. We show also that the number of cascades for type-II interband cascade lasers can be optimized with respect to the highest achievable operating temperature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1814432