Pentacene organic field-effect transistor on metal substrate with spin-coated smoothing layer

In this letter we report the use of roughly polished aluminum substrates with spin-coated polymer-smoothing layers for the fabrication of pentacene field-effect transistors. Transistors with spin-coated poly(methylmethacrylate) gate insulator layers were fabricated and showed good performance. On th...

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Bibliographic Details
Published in:Applied physics letters 2004-11, Vol.85 (19), p.4406-4408
Main Authors: Jin, Yanbo, Rang, Zhenlin, Nathan, Marshall I., Ruden, P. Paul, Newman, Christopher R., Frisbie, C. Daniel
Format: Article
Language:English
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Summary:In this letter we report the use of roughly polished aluminum substrates with spin-coated polymer-smoothing layers for the fabrication of pentacene field-effect transistors. Transistors with spin-coated poly(methylmethacrylate) gate insulator layers were fabricated and showed good performance. On the gate insulator surface, the root-mean-square roughness was found to be 0.18nm, significantly smaller than the aluminum surface roughness, which is on the scale of tens of nanometers. Field-effect carrier mobilities extracted from the device data reached 0.75cm2V−1s−1; the maximum on/off current ratio was near 5×106.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1814802