Growth of thick ( 11 2 ¯ 0 ) GaN using a metal interlayer

Thick films of ( 11 2 ¯ 0 ) -oriented GaN have been grown on Ti-coated metal organic chemical vapor deposition templates using hydride vapor phase epitaxy. Significant reductions in crack density were observed enabling 240 μ m thick films to be grown on sapphire. The use of Ti interlayers was shown...

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Bibliographic Details
Published in:Applied physics letters 2004-11, Vol.85 (20), p.4630-4632
Main Authors: Tavernier, P. R., Imer, B., DenBaars, S. P., Clarke, D. R.
Format: Article
Language:English
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Summary:Thick films of ( 11 2 ¯ 0 ) -oriented GaN have been grown on Ti-coated metal organic chemical vapor deposition templates using hydride vapor phase epitaxy. Significant reductions in crack density were observed enabling 240 μ m thick films to be grown on sapphire. The use of Ti interlayers was shown to generate significant fractions of voids at the interlayer regrowth interface facilitating void-assisted separation on cooling. Ti metal layers annealed under optimal conditions were found to produce a TiN nanomask suitable for lateral overgrowth during HVPE. An estimate of the void size required to allow spontaneous delamination of the substrate at the TiN-GaN interface is discussed with reference to growth conditions.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1818736