Reflection property of nano-acoustic wave at the air∕GaN interface

We present a study on the total internal reflection of nano-acoustic waves (NAWs) at the air∕GaN interface. The coherent NAW was generated and detected by piezoelectric InGaN∕GaN multiple quantum wells using a femtosecond transient transmission technique. With suitably designed sample structures, th...

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Bibliographic Details
Published in:Applied physics letters 2004-11, Vol.85 (20), p.4735-4737
Main Authors: Hsieh, Chia-Lung, Lin, Kung-Hsuan, Wu, Shr-Bin, Pan, Chang-Chi, Chyi, Jen-Inn, Sun, Chi-Kuang
Format: Article
Language:English
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Summary:We present a study on the total internal reflection of nano-acoustic waves (NAWs) at the air∕GaN interface. The coherent NAW was generated and detected by piezoelectric InGaN∕GaN multiple quantum wells using a femtosecond transient transmission technique. With suitably designed sample structures, the fact that strain of the NAW experiences a sign change after total internal reflection at the air∕solid interface is examined directly. The surface roughness of the sample was found to distort the wave front of the NAW and to diminish the measured amplitude of the reflected NAW.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1819989