Structural and dielectric properties of epitaxial Ba1−xSrxTiO3 films grown on LaAlO3 substrates by polymer-assisted deposition

Epitaxial Ba1−xSrxTiO3 (BST) thin films with different Ba∕Sr ratio (x=0.1–0.9 with an interval of 0.1) have been grown on (001) LaAlO3 substrates using polymer-assisted deposition. Dielectric measurements show that the films have dielectric properties comparable to the BST films grown by the pulsed...

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Bibliographic Details
Published in:Applied physics letters 2004-11, Vol.85 (21), p.5007-5009
Main Authors: Lin, Y., Lee, Jang-Sik, Wang, H., Li, Y., Foltyn, S. R., Jia, Q. X., Collis, G. E., Burrell, A. K., McCleskey, T. M.
Format: Article
Language:English
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Summary:Epitaxial Ba1−xSrxTiO3 (BST) thin films with different Ba∕Sr ratio (x=0.1–0.9 with an interval of 0.1) have been grown on (001) LaAlO3 substrates using polymer-assisted deposition. Dielectric measurements show that the films have dielectric properties comparable to the BST films grown by the pulsed laser deposition. Systematic changes in the lattice parameters and dielectric behavior with x values have been measured. The highest dielectric constant (∼1010) and tunability (∼69%) at 1MHz and room temperature have been obtained at x=0.3, which is at the phase boundary of tetragonal and cubic structures.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1827927