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Excitation photocapacitance study of EL2 in n - GaAs prepared by annealing under different arsenic vapor pressures
The excitation photocapacitance method was applied to n - GaAs : Te ( n = 4 × 10 16 cm − 3 ) prepared by annealing under various excess arsenic vapor pressures. By changing the primary excitation photon energies, the emission spectra for the EL 2 0 → EL 2 + and EL 2 + → EL 2 + + transitions were det...
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| Published in: | Journal of applied physics 2005-02, Vol.97 (3), p.033705-033705-6 |
|---|---|
| Main Authors: | , |
| Format: | Article |
| Language: | English |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Get full text |
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| Summary: | The excitation photocapacitance method was applied to
n
-
GaAs
:
Te
(
n
=
4
×
10
16
cm
−
3
)
prepared by annealing under various excess arsenic vapor pressures. By changing the primary excitation photon energies, the emission spectra for the
EL
2
0
→
EL
2
+
and
EL
2
+
→
EL
2
+
+
transitions were determined. Considering the electron capture processes of the valence band
(
VB
)
→
EL
2
+
(
0.67
eV
)
and
VB
→
EL
2
+
+
(
0.47
eV
)
at
77
K
, the Frank-Condon shifts
(
d
FC
)
of the annealed
GaAs
crystals were determined for the
EL
2
+
level on the basis of the configuration coordinate model. It was shown that the lattice relaxation around the
EL
2
level is larger under arsenic-poor conditions, and thus it is considered that arsenic vacancies are closely related with the atomic configuration of the
EL
2
defect, in combination with excess arsenic defects. |
|---|---|
| ISSN: | 0021-8979 1089-7550 |
| DOI: | 10.1063/1.1839635 |