Hot-electron transport in 4H-SiC

Nanosecond-pulsed technique is used to study hot-electron transport in donor-doped 4H-SiC ( n = 2 × 10 17 cm − 3 ) biased parallel to the basal plane. The measurements of current with 1 ns voltage pulses are carried out at average electric fields up to 570 kV ∕ cm . A region with a negative differen...

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Bibliographic Details
Published in:Applied physics letters 2005-01, Vol.86 (2), p.022107-022107-3
Main Authors: Ardaravičius, L., Matulionis, A., Kiprijanovic, O., Liberis, J., Cha, H.-Y., Eastman, L. F., Spencer, M. G.
Format: Article
Language:English
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Summary:Nanosecond-pulsed technique is used to study hot-electron transport in donor-doped 4H-SiC ( n = 2 × 10 17 cm − 3 ) biased parallel to the basal plane. The measurements of current with 1 ns voltage pulses are carried out at average electric fields up to 570 kV ∕ cm . A region with a negative differential conductance is observed for the range of fields exceeding 280 kV ∕ cm , followed by a sharp increase in the current at fields over 345 kV ∕ cm . The dependence of drift velocity on electric field is deduced for the field range below the onset of the negative differential conductance to appear: the value of the saturation velocity is estimated as 1.4 × 10 7 cm ∕ s at room temperature.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1851001