Highly efficient vertical laser-liftoff GaN-based light-emitting diodes formed by optimization of the cathode structure

Vertical GaN-based light-emitting diodes (LEDs) were fabricated using a laser-liftoff process and the effect of the cathode processing conditions on the properties of the LEDs was investigated. Surface roughening by 10 % Cl 2 ∕ 90 % B Cl 3 plasma etching improved the light emission intensity at an o...

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Bibliographic Details
Published in:Applied physics letters 2005-01, Vol.86 (5), p.052108-052108-3
Main Authors: Kim, D. W., Lee, H. Y., Yoo, M. C., Yeom, G. Y.
Format: Article
Language:English
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Summary:Vertical GaN-based light-emitting diodes (LEDs) were fabricated using a laser-liftoff process and the effect of the cathode processing conditions on the properties of the LEDs was investigated. Surface roughening by 10 % Cl 2 ∕ 90 % B Cl 3 plasma etching improved the light emission intensity at an operating current of 20 mA ; however, the forward operating voltage was increased due to the thin and rough n - Ga N layer. The use of an indium tin oxide (ITO) contact on the roughened n -type GaN surface decreased the forward voltage significantly, by decreasing the spreading resistance of the n -type GaN contact without decreasing the emission intensity. Through the combination of the ITO contact and the surface roughness of the n - Ga N layer, a 100% increase in the extraction efficiency was obtained compared to that of a lateral GaN device, with maintaining a similar forward operating voltage.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1861497