Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO2∕SiO2 stack as the tunnel dielectric

A metal-insulator-semiconductor (MIS) structure containing a HfO2 control gate, a Ge nanocrystal-embedded HfO2 dielectric and a HfO2∕SiO2 stack layer as tunnel oxide, was fabricated by an electron-beam evaporation method. High-resolution transmission electron microscopy study revealed that the HfO2∕...

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Published in:Applied physics letters 2005-03, Vol.86 (11)
Main Authors: Wang, Shiye, Liu, Weili, Wan, Qing, Dai, J. Y., Lee, P. F., Suhua, Luo, Shen, Qinwo, Zhang, Miao, Song, Zhitang, Lin, Chenglu
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cited_by cdi_FETCH-LOGICAL-c229t-100b6175d0a8f9c0b1261a31b4bced5e901d426447f41825cd4088320b108bca3
cites cdi_FETCH-LOGICAL-c229t-100b6175d0a8f9c0b1261a31b4bced5e901d426447f41825cd4088320b108bca3
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container_issue 11
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container_title Applied physics letters
container_volume 86
creator Wang, Shiye
Liu, Weili
Wan, Qing
Dai, J. Y.
Lee, P. F.
Suhua, Luo
Shen, Qinwo
Zhang, Miao
Song, Zhitang
Lin, Chenglu
description A metal-insulator-semiconductor (MIS) structure containing a HfO2 control gate, a Ge nanocrystal-embedded HfO2 dielectric and a HfO2∕SiO2 stack layer as tunnel oxide, was fabricated by an electron-beam evaporation method. High-resolution transmission electron microscopy study revealed that the HfO2∕SiO2 stack layer minimized Ge penetration, leading to the formation of Ge nanocrystals that are self-aligned between the tunnel oxide and the capping HfO2 layer. Influence of different annealing conditions on the formation and distribution of Ge nanocrystals was studied. Current–voltage (I–V) and capacitance–voltage (C–V) measurements revealed promising electrical characteristics of the MIS structure, and relatively high stored charge density of 1012cm−2 was achieved.
doi_str_mv 10.1063/1.1864254
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1864254</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_1864254</sourcerecordid><originalsourceid>FETCH-LOGICAL-c229t-100b6175d0a8f9c0b1261a31b4bced5e901d426447f41825cd4088320b108bca3</originalsourceid><addsrcrecordid>eNotUM1KAzEYDKJgrR58g1w9pH5fkv07StG2UOhBPS_ZbNZGt1lJskovnn2BvqBPYsSeZoYZZmAIuUaYIeTiFmdY5pJn8oRMEIqCCcTylEwAQLC8yvCcXITwmmTGhZiQr5X7MCHaFxXt4OjQ0YWhTrlB-31UfaDWUUV3JnFmXRh7FQfPgtlZPbh21EnREH0iozf008Ztii-7Df_5PjzaDU-m0m9UBRq3hsbROdPT1pre6OitviRnXVoxV0eckueH-6f5kq03i9X8bs0051VkCNDkWGQtqLKrNDTIc1QCG9lo02amAmwlz6UsOoklz3QroSwFT0EoG63ElNz892o_hOBNV797u1N-XyPUf8fVWB-PE7_9nGIf</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO2∕SiO2 stack as the tunnel dielectric</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>American Institute of Physics</source><creator>Wang, Shiye ; Liu, Weili ; Wan, Qing ; Dai, J. Y. ; Lee, P. F. ; Suhua, Luo ; Shen, Qinwo ; Zhang, Miao ; Song, Zhitang ; Lin, Chenglu</creator><creatorcontrib>Wang, Shiye ; Liu, Weili ; Wan, Qing ; Dai, J. Y. ; Lee, P. F. ; Suhua, Luo ; Shen, Qinwo ; Zhang, Miao ; Song, Zhitang ; Lin, Chenglu</creatorcontrib><description>A metal-insulator-semiconductor (MIS) structure containing a HfO2 control gate, a Ge nanocrystal-embedded HfO2 dielectric and a HfO2∕SiO2 stack layer as tunnel oxide, was fabricated by an electron-beam evaporation method. High-resolution transmission electron microscopy study revealed that the HfO2∕SiO2 stack layer minimized Ge penetration, leading to the formation of Ge nanocrystals that are self-aligned between the tunnel oxide and the capping HfO2 layer. Influence of different annealing conditions on the formation and distribution of Ge nanocrystals was studied. Current–voltage (I–V) and capacitance–voltage (C–V) measurements revealed promising electrical characteristics of the MIS structure, and relatively high stored charge density of 1012cm−2 was achieved.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.1864254</identifier><language>eng</language><ispartof>Applied physics letters, 2005-03, Vol.86 (11)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c229t-100b6175d0a8f9c0b1261a31b4bced5e901d426447f41825cd4088320b108bca3</citedby><cites>FETCH-LOGICAL-c229t-100b6175d0a8f9c0b1261a31b4bced5e901d426447f41825cd4088320b108bca3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,782,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Wang, Shiye</creatorcontrib><creatorcontrib>Liu, Weili</creatorcontrib><creatorcontrib>Wan, Qing</creatorcontrib><creatorcontrib>Dai, J. Y.</creatorcontrib><creatorcontrib>Lee, P. F.</creatorcontrib><creatorcontrib>Suhua, Luo</creatorcontrib><creatorcontrib>Shen, Qinwo</creatorcontrib><creatorcontrib>Zhang, Miao</creatorcontrib><creatorcontrib>Song, Zhitang</creatorcontrib><creatorcontrib>Lin, Chenglu</creatorcontrib><title>Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO2∕SiO2 stack as the tunnel dielectric</title><title>Applied physics letters</title><description>A metal-insulator-semiconductor (MIS) structure containing a HfO2 control gate, a Ge nanocrystal-embedded HfO2 dielectric and a HfO2∕SiO2 stack layer as tunnel oxide, was fabricated by an electron-beam evaporation method. High-resolution transmission electron microscopy study revealed that the HfO2∕SiO2 stack layer minimized Ge penetration, leading to the formation of Ge nanocrystals that are self-aligned between the tunnel oxide and the capping HfO2 layer. Influence of different annealing conditions on the formation and distribution of Ge nanocrystals was studied. Current–voltage (I–V) and capacitance–voltage (C–V) measurements revealed promising electrical characteristics of the MIS structure, and relatively high stored charge density of 1012cm−2 was achieved.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNotUM1KAzEYDKJgrR58g1w9pH5fkv07StG2UOhBPS_ZbNZGt1lJskovnn2BvqBPYsSeZoYZZmAIuUaYIeTiFmdY5pJn8oRMEIqCCcTylEwAQLC8yvCcXITwmmTGhZiQr5X7MCHaFxXt4OjQ0YWhTrlB-31UfaDWUUV3JnFmXRh7FQfPgtlZPbh21EnREH0iozf008Ztii-7Df_5PjzaDU-m0m9UBRq3hsbROdPT1pre6OitviRnXVoxV0eckueH-6f5kq03i9X8bs0051VkCNDkWGQtqLKrNDTIc1QCG9lo02amAmwlz6UsOoklz3QroSwFT0EoG63ElNz892o_hOBNV797u1N-XyPUf8fVWB-PE7_9nGIf</recordid><startdate>20050314</startdate><enddate>20050314</enddate><creator>Wang, Shiye</creator><creator>Liu, Weili</creator><creator>Wan, Qing</creator><creator>Dai, J. Y.</creator><creator>Lee, P. F.</creator><creator>Suhua, Luo</creator><creator>Shen, Qinwo</creator><creator>Zhang, Miao</creator><creator>Song, Zhitang</creator><creator>Lin, Chenglu</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20050314</creationdate><title>Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO2∕SiO2 stack as the tunnel dielectric</title><author>Wang, Shiye ; Liu, Weili ; Wan, Qing ; Dai, J. Y. ; Lee, P. F. ; Suhua, Luo ; Shen, Qinwo ; Zhang, Miao ; Song, Zhitang ; Lin, Chenglu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c229t-100b6175d0a8f9c0b1261a31b4bced5e901d426447f41825cd4088320b108bca3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wang, Shiye</creatorcontrib><creatorcontrib>Liu, Weili</creatorcontrib><creatorcontrib>Wan, Qing</creatorcontrib><creatorcontrib>Dai, J. Y.</creatorcontrib><creatorcontrib>Lee, P. F.</creatorcontrib><creatorcontrib>Suhua, Luo</creatorcontrib><creatorcontrib>Shen, Qinwo</creatorcontrib><creatorcontrib>Zhang, Miao</creatorcontrib><creatorcontrib>Song, Zhitang</creatorcontrib><creatorcontrib>Lin, Chenglu</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wang, Shiye</au><au>Liu, Weili</au><au>Wan, Qing</au><au>Dai, J. Y.</au><au>Lee, P. F.</au><au>Suhua, Luo</au><au>Shen, Qinwo</au><au>Zhang, Miao</au><au>Song, Zhitang</au><au>Lin, Chenglu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO2∕SiO2 stack as the tunnel dielectric</atitle><jtitle>Applied physics letters</jtitle><date>2005-03-14</date><risdate>2005</risdate><volume>86</volume><issue>11</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>A metal-insulator-semiconductor (MIS) structure containing a HfO2 control gate, a Ge nanocrystal-embedded HfO2 dielectric and a HfO2∕SiO2 stack layer as tunnel oxide, was fabricated by an electron-beam evaporation method. High-resolution transmission electron microscopy study revealed that the HfO2∕SiO2 stack layer minimized Ge penetration, leading to the formation of Ge nanocrystals that are self-aligned between the tunnel oxide and the capping HfO2 layer. Influence of different annealing conditions on the formation and distribution of Ge nanocrystals was studied. Current–voltage (I–V) and capacitance–voltage (C–V) measurements revealed promising electrical characteristics of the MIS structure, and relatively high stored charge density of 1012cm−2 was achieved.</abstract><doi>10.1063/1.1864254</doi></addata></record>
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title Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO2∕SiO2 stack as the tunnel dielectric
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T13%3A57%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Investigation%20of%20Ge%20nanocrytals%20in%20a%20metal-insulator-semiconductor%20structure%20with%20a%20HfO2%E2%88%95SiO2%20stack%20as%20the%20tunnel%20dielectric&rft.jtitle=Applied%20physics%20letters&rft.au=Wang,%20Shiye&rft.date=2005-03-14&rft.volume=86&rft.issue=11&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.1864254&rft_dat=%3Ccrossref%3E10_1063_1_1864254%3C/crossref%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c229t-100b6175d0a8f9c0b1261a31b4bced5e901d426447f41825cd4088320b108bca3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true