High efficiency visible electroluminescence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer

We have fabricated light-emitting diodes with a transparent doping layer on silicon nanocrystals (nc-Si) embeded in silicon nitride matrix formed by plasma-enhanced chemical vapor deposition. Under forward biased condition, orange electroluminescence (EL) with its peak wavelength at about 600 nm was...

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Bibliographic Details
Published in:Applied physics letters 2005-02, Vol.86 (7), p.071909-071909-3
Main Authors: Cho, Kwan Sik, Park, Nae-Man, Kim, Tae-Youb, Kim, Kyung-Hyun, Sung, Gun Yong, Shin, Jung H.
Format: Article
Language:English
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Summary:We have fabricated light-emitting diodes with a transparent doping layer on silicon nanocrystals (nc-Si) embeded in silicon nitride matrix formed by plasma-enhanced chemical vapor deposition. Under forward biased condition, orange electroluminescence (EL) with its peak wavelength at about 600 nm was observed at room temperature. The peak position of the EL is very similar to that of the photoluminescence (PL) and the emitted EL intensity is proportional to the current density passing through the device. We suggest that the observed EL is originated from electron-hole pair recombination in nc-Si. By using indium tin oxide and n -type SiC layer combination as a transparent doping layer, we obtained high external quantum efficiency greater than 1.6%.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1866638