Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface

We demonstrate that ultrashallow high-concentration phosphorus profiles in silicon diffuse preferentially toward the surface during low-temperature annealing at 700 ° C after recrystallization of an amorphous layer. In this work, we observe the preferential diffusion following a preamorphizing germa...

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Bibliographic Details
Published in:Applied physics letters 2005-02, Vol.86 (8), p.081917-081917-3
Main Authors: Duffy, R., Venezia, V. C., Loo, J., Hopstaken, M. J. P., Verheijen, M. A., van Berkum, J. G. M., Maas, G. C. J., Tamminga, Y., Dao, T., Demeurisse, C.
Format: Article
Language:English
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Summary:We demonstrate that ultrashallow high-concentration phosphorus profiles in silicon diffuse preferentially toward the surface during low-temperature annealing at 700 ° C after recrystallization of an amorphous layer. In this work, we observe the preferential diffusion following a preamorphizing germanium implant, and also after a self-amorphizing phosphorus implant. This phenomenon is driven by the presence and dissolution of silicon interstitial defects. The greater the distance between the defect band and the high-concentration phosphorus profile, the less the preferential diffusion for a fixed anneal time. The overall result of this effect is a phosphorus profile that is significantly shallower and steeper than after implant.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1869540