Effect of doping on the magnetic properties of GaMnN:Fermi level engineering

GaMnN dilute magnetic semiconductor samples, prepared by metalorganic chemical vapor deposition, are shown to exhibit ferromagnetism or even paramagnetism depending upon the type and concentration of extrinsic impurity present in the film. In addition, GaMnN deposited using growth parameters normall...

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Bibliographic Details
Published in:Applied physics letters 2005-03, Vol.86 (10), p.102504-102504-3
Main Authors: Reed, M. J., Arkun, F. E., Berkman, E. A., Elmasry, N. A., Zavada, J., Luen, M. O., Reed, M. L., Bedair, S. M.
Format: Article
Language:English
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Summary:GaMnN dilute magnetic semiconductor samples, prepared by metalorganic chemical vapor deposition, are shown to exhibit ferromagnetism or even paramagnetism depending upon the type and concentration of extrinsic impurity present in the film. In addition, GaMnN deposited using growth parameters normally yielding a nonferromagnetic film becomes strongly ferromagnetic with the addition of magnesium, an acceptor dopant. Based upon these observations, it seems that ferromagnetism in this material system depends on the relative position of the Mn energy band and the Fermi level within the GaMnN band gap. Only when the Fermi level closely coincides with the Mn-energy level is ferromagnetism achieved. By actively engineering the Fermi energy to be within or near the Mn energy band, room temperature ferromagnetism is realized.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1881786