Controlled growth of Zn-polar ZnO epitaxial film by nitridation of sapphire substrate

Surface nitridation is used to eliminate O-polar inversion domains and control the growth of single-domain Zn-polar ZnO film on sapphire (0001) substrate by rf-plasma-assisted molecular-beam epitaxy. It is found that the nitridation temperature is crucial for achieving quality AlN buffer layers and...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2005-03, Vol.86 (11)
Main Authors: Mei, Z. X., Du, X. L., Wang, Y., Ying, M. J., Zeng, Z. Q., Zheng, H., Jia, J. F., Xue, Q. K., Zhang, Z.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Surface nitridation is used to eliminate O-polar inversion domains and control the growth of single-domain Zn-polar ZnO film on sapphire (0001) substrate by rf-plasma-assisted molecular-beam epitaxy. It is found that the nitridation temperature is crucial for achieving quality AlN buffer layers and ZnO films with cation polarity, as demonstrated by ex situ transmission electron microscopy. Under optimal growth conditions, a 4×4 surface reconstruction was observed, which is confirmed to be a characteristic surface structure of the Zn-polar films, and can be used as a fingerprint to optimize the ZnO growth.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1884266