Site-controlled photoluminescence at telecommunication wavelength from InAs∕InP quantum dots

We fabricated ordered InAs ∕ InP quantum-dot (QD) arrays using atomic-force-microscopic oxidation, wet etching, and regrowth by metalorganic chemical vapor deposition. The QDs exhibit single-dot photoluminescence peaking at wavelengths ranging from 1.22 to 1.45 μ m , mostly matching the telecommunic...

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Bibliographic Details
Published in:Applied physics letters 2005-03, Vol.86 (11), p.113118-113118-3
Main Authors: Song, H. Z., Usuki, T., Hirose, S., Takemoto, K., Nakata, Y., Yokoyama, N., Sakuma, Y.
Format: Article
Language:English
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Summary:We fabricated ordered InAs ∕ InP quantum-dot (QD) arrays using atomic-force-microscopic oxidation, wet etching, and regrowth by metalorganic chemical vapor deposition. The QDs exhibit single-dot photoluminescence peaking at wavelengths ranging from 1.22 to 1.45 μ m , mostly matching the telecommunication band of optical fibers. The site dependence of single peaks indicates the site controllability of single-dot light emitters, which might be useful in quantum information processing.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1887826