Mechanical force sensors using organic thin-film transistors

The pressure dependence of pentacene ( C 22 H 14 ) transistors with solution-processed polyvinylphenol gate dielectric on glass substrates is investigated by applying uniaxial mechanical pressure with a needle. We found that organic thin-film transistors are sensitive to applied pressure inherently....

Full description

Saved in:
Bibliographic Details
Published in:Journal of applied physics 2005-05, Vol.97 (9), p.093708-093708-4
Main Authors: Darlinski, Grzegorz, Böttger, Ulrich, Waser, Rainer, Klauk, Hagen, Halik, Marcus, Zschieschang, Ute, Schmid, Günter, Dehm, Christine
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c385t-de888ede68b9318d91696b4d96d365f71655a3f50ed27655392fe26cacba89e43
cites cdi_FETCH-LOGICAL-c385t-de888ede68b9318d91696b4d96d365f71655a3f50ed27655392fe26cacba89e43
container_end_page 093708-4
container_issue 9
container_start_page 093708
container_title Journal of applied physics
container_volume 97
creator Darlinski, Grzegorz
Böttger, Ulrich
Waser, Rainer
Klauk, Hagen
Halik, Marcus
Zschieschang, Ute
Schmid, Günter
Dehm, Christine
description The pressure dependence of pentacene ( C 22 H 14 ) transistors with solution-processed polyvinylphenol gate dielectric on glass substrates is investigated by applying uniaxial mechanical pressure with a needle. We found that organic thin-film transistors are sensitive to applied pressure inherently. The measurements reveal a reversible current dependence of the transfer characteristics where the drain current is switching between two states. Experimental and simulation results suggest that switch-on voltage and interface resistance are affected. The change takes seconds, hinting at trap states being responsible for the effect.
doi_str_mv 10.1063/1.1888046
format article
fullrecord <record><control><sourceid>scitation_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_1888046</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>jap</sourcerecordid><originalsourceid>FETCH-LOGICAL-c385t-de888ede68b9318d91696b4d96d365f71655a3f50ed27655392fe26cacba89e43</originalsourceid><addsrcrecordid>eNp1j0tLAzEUhYMoWKsL_0G2LlJzJ5NMAiJI8QUVN7oOmTzayDQjSVz4753agitX98D9OJwPoUugC6CCXcMCpJS0FUdoBlQq0nFOj9GM0gaIVJ06RWelfFAKIJmaoZsXbzcmRWsGHMZsPS4-lTEX_FViWuMxr3dfXDcxkRCHLa7ZpBJLnZhzdBLMUPzF4c7R-8P92_KJrF4fn5d3K2KZ5JU4P03yzgvZKwbSKRBK9K1TwjHBQweCc8MCp9413ZSZaoJvhDW2N1L5ls3R1b7X5rGU7IP-zHFr8rcGqnfaGvRBe2Jv92yxsZoax_Q__Oeuf9315M5-AIOLX58</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Mechanical force sensors using organic thin-film transistors</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><creator>Darlinski, Grzegorz ; Böttger, Ulrich ; Waser, Rainer ; Klauk, Hagen ; Halik, Marcus ; Zschieschang, Ute ; Schmid, Günter ; Dehm, Christine</creator><creatorcontrib>Darlinski, Grzegorz ; Böttger, Ulrich ; Waser, Rainer ; Klauk, Hagen ; Halik, Marcus ; Zschieschang, Ute ; Schmid, Günter ; Dehm, Christine</creatorcontrib><description>The pressure dependence of pentacene ( C 22 H 14 ) transistors with solution-processed polyvinylphenol gate dielectric on glass substrates is investigated by applying uniaxial mechanical pressure with a needle. We found that organic thin-film transistors are sensitive to applied pressure inherently. The measurements reveal a reversible current dependence of the transfer characteristics where the drain current is switching between two states. Experimental and simulation results suggest that switch-on voltage and interface resistance are affected. The change takes seconds, hinting at trap states being responsible for the effect.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.1888046</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Journal of applied physics, 2005-05, Vol.97 (9), p.093708-093708-4</ispartof><rights>2005 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c385t-de888ede68b9318d91696b4d96d365f71655a3f50ed27655392fe26cacba89e43</citedby><cites>FETCH-LOGICAL-c385t-de888ede68b9318d91696b4d96d365f71655a3f50ed27655392fe26cacba89e43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Darlinski, Grzegorz</creatorcontrib><creatorcontrib>Böttger, Ulrich</creatorcontrib><creatorcontrib>Waser, Rainer</creatorcontrib><creatorcontrib>Klauk, Hagen</creatorcontrib><creatorcontrib>Halik, Marcus</creatorcontrib><creatorcontrib>Zschieschang, Ute</creatorcontrib><creatorcontrib>Schmid, Günter</creatorcontrib><creatorcontrib>Dehm, Christine</creatorcontrib><title>Mechanical force sensors using organic thin-film transistors</title><title>Journal of applied physics</title><description>The pressure dependence of pentacene ( C 22 H 14 ) transistors with solution-processed polyvinylphenol gate dielectric on glass substrates is investigated by applying uniaxial mechanical pressure with a needle. We found that organic thin-film transistors are sensitive to applied pressure inherently. The measurements reveal a reversible current dependence of the transfer characteristics where the drain current is switching between two states. Experimental and simulation results suggest that switch-on voltage and interface resistance are affected. The change takes seconds, hinting at trap states being responsible for the effect.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp1j0tLAzEUhYMoWKsL_0G2LlJzJ5NMAiJI8QUVN7oOmTzayDQjSVz4753agitX98D9OJwPoUugC6CCXcMCpJS0FUdoBlQq0nFOj9GM0gaIVJ06RWelfFAKIJmaoZsXbzcmRWsGHMZsPS4-lTEX_FViWuMxr3dfXDcxkRCHLa7ZpBJLnZhzdBLMUPzF4c7R-8P92_KJrF4fn5d3K2KZ5JU4P03yzgvZKwbSKRBK9K1TwjHBQweCc8MCp9413ZSZaoJvhDW2N1L5ls3R1b7X5rGU7IP-zHFr8rcGqnfaGvRBe2Jv92yxsZoax_Q__Oeuf9315M5-AIOLX58</recordid><startdate>20050501</startdate><enddate>20050501</enddate><creator>Darlinski, Grzegorz</creator><creator>Böttger, Ulrich</creator><creator>Waser, Rainer</creator><creator>Klauk, Hagen</creator><creator>Halik, Marcus</creator><creator>Zschieschang, Ute</creator><creator>Schmid, Günter</creator><creator>Dehm, Christine</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20050501</creationdate><title>Mechanical force sensors using organic thin-film transistors</title><author>Darlinski, Grzegorz ; Böttger, Ulrich ; Waser, Rainer ; Klauk, Hagen ; Halik, Marcus ; Zschieschang, Ute ; Schmid, Günter ; Dehm, Christine</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c385t-de888ede68b9318d91696b4d96d365f71655a3f50ed27655392fe26cacba89e43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Darlinski, Grzegorz</creatorcontrib><creatorcontrib>Böttger, Ulrich</creatorcontrib><creatorcontrib>Waser, Rainer</creatorcontrib><creatorcontrib>Klauk, Hagen</creatorcontrib><creatorcontrib>Halik, Marcus</creatorcontrib><creatorcontrib>Zschieschang, Ute</creatorcontrib><creatorcontrib>Schmid, Günter</creatorcontrib><creatorcontrib>Dehm, Christine</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Darlinski, Grzegorz</au><au>Böttger, Ulrich</au><au>Waser, Rainer</au><au>Klauk, Hagen</au><au>Halik, Marcus</au><au>Zschieschang, Ute</au><au>Schmid, Günter</au><au>Dehm, Christine</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Mechanical force sensors using organic thin-film transistors</atitle><jtitle>Journal of applied physics</jtitle><date>2005-05-01</date><risdate>2005</risdate><volume>97</volume><issue>9</issue><spage>093708</spage><epage>093708-4</epage><pages>093708-093708-4</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>The pressure dependence of pentacene ( C 22 H 14 ) transistors with solution-processed polyvinylphenol gate dielectric on glass substrates is investigated by applying uniaxial mechanical pressure with a needle. We found that organic thin-film transistors are sensitive to applied pressure inherently. The measurements reveal a reversible current dependence of the transfer characteristics where the drain current is switching between two states. Experimental and simulation results suggest that switch-on voltage and interface resistance are affected. The change takes seconds, hinting at trap states being responsible for the effect.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.1888046</doi><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0021-8979
ispartof Journal of applied physics, 2005-05, Vol.97 (9), p.093708-093708-4
issn 0021-8979
1089-7550
language eng
recordid cdi_crossref_primary_10_1063_1_1888046
source American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)
title Mechanical force sensors using organic thin-film transistors
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T02%3A13%3A31IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-scitation_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Mechanical%20force%20sensors%20using%20organic%20thin-film%20transistors&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Darlinski,%20Grzegorz&rft.date=2005-05-01&rft.volume=97&rft.issue=9&rft.spage=093708&rft.epage=093708-4&rft.pages=093708-093708-4&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.1888046&rft_dat=%3Cscitation_cross%3Ejap%3C/scitation_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c385t-de888ede68b9318d91696b4d96d365f71655a3f50ed27655392fe26cacba89e43%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true