Impact of interface structure on Schottky-barrier height for Ni∕ZrO2(001) interfaces

The Schottky-barrier heights for the Ni and ZrO2 interfaces have been determined using the x-ray photoemission method. Depending on the surface treatment of ZrO2, the variation of Schottky-barrier heights at Ni∕ZrO2 interfaces was found as large as 0.76±0.10eV. The p-type Schottky-barrier height for...

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Bibliographic Details
Published in:Applied physics letters 2005-03, Vol.86 (13)
Main Authors: Dong, Y. F., Wang, S. J., Chai, J. W., Feng, Y. P., Huan, A. C. H.
Format: Article
Language:English
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Summary:The Schottky-barrier heights for the Ni and ZrO2 interfaces have been determined using the x-ray photoemission method. Depending on the surface treatment of ZrO2, the variation of Schottky-barrier heights at Ni∕ZrO2 interfaces was found as large as 0.76±0.10eV. The p-type Schottky-barrier height for the oxygen-rich (oxygen-deficient) interface was measured to be 2.60eV (3.36eV). First-principles calculations provide a microscopic explanation of such variation, which was attributed to the different interface dipole formed by interfacial Ni–O, Ni–Zr bonds, or oxygen vacancies.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1891285