Room-temperature semiconductor gas sensor based on nonstoichiometric tungsten oxide nanorod film

Porous tungsten oxide films were deposited onto a sensor substrate with a Si bulk-micromachined hotplate, by drop-coating isopropyl alcohol solution of highly crystalline tungsten oxide ( W O 2.72 ) nanorods with average 75 nm length and 4 nm diameter. The temperature-dependent gas sensing character...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2005-05, Vol.86 (21), p.213105-213105-3
Main Authors: Kim, Yong Shin, Ha, Seung-Chul, Kim, Kyuwon, Yang, Haesik, Choi, Sung-Yool, Kim, Youn Tae, Park, Joon T., Lee, Chang Hoon, Choi, Jiyoung, Paek, Jungsun, Lee, Kwangyeol
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Porous tungsten oxide films were deposited onto a sensor substrate with a Si bulk-micromachined hotplate, by drop-coating isopropyl alcohol solution of highly crystalline tungsten oxide ( W O 2.72 ) nanorods with average 75 nm length and 4 nm diameter. The temperature-dependent gas sensing characteristics of the films have been investigated over the mild temperature range from 20 to 250 ° C . While the sensing responses for ammonia vapor showed increase in electrical conductivity at temperatures above 150 ° C as expected for n -type metal oxide sensors, they exhibited the opposite behavior of unusual conductivity decrease below 100 ° C . Superb sensing ability of the sensors at room temperature in conjunction with their anomalous conductivity behavior might be attributed to unique nanostructural features of very thin, nonstoichiometric W O 2.72 .
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1929872