Loading…

Observation of the biexponential ground-state decay time behavior in InAs self-assembled quantum dots grown on misoriented substrates

Biexponential behavior of the time-resolved photoluminescence decay from the ground state has been studied over a temperature range of 77-300 K on samples with varying sized self-assembled InAs∕GaAs quantum dot ensembles controlled by substrate misorientation alone. The slower second decay component...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2005-05, Vol.86 (21), p.211112-211112-3
Main Authors: Shkolnik, A. S., Karachinsky, L. Ya, Gordeev, N. Yu, Zegrya, G. G., Evtikhiev, V. P., Pellegrini, S., Buller, G. S.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Biexponential behavior of the time-resolved photoluminescence decay from the ground state has been studied over a temperature range of 77-300 K on samples with varying sized self-assembled InAs∕GaAs quantum dot ensembles controlled by substrate misorientation alone. The slower second decay component is considerably longer than the first one, and has been measured to be as long as 300 ns. This slow component is attributed to carrier recapturing and indirect radiative recombination processes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1938000