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Mask-free photolithographic exposure using a matrix-addressable micropixellated AlInGaN ultraviolet light-emitting diode
We report the integration of a UV-curable polymer microlens array onto a matrix-addressable, 368 - nm -wavelength, light-emitting diode device containing 64 × 64 micropixel elements. The geometrical and optical parameters of the microlenses were carefully chosen to allow the highly divergent emissio...
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Published in: | Applied physics letters 2005-05, Vol.86 (22), p.221105-221105-3 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We report the integration of a UV-curable polymer microlens array onto a matrix-addressable,
368
-
nm
-wavelength, light-emitting diode device containing
64
×
64
micropixel elements. The geometrical and optical parameters of the microlenses were carefully chosen to allow the highly divergent emission from each micropixel to be collimated into a narrow beam of about
8
-
μ
m
diam, over a distance of more than
500
μ
m
. This device is demonstrated as a photolithographic exposure tool, where the pattern-programmable array plays the role both of light source and photomask. A simple pattern comprised of two disks having
16
-
μ
m
diam and
30
-
μ
m
spacing was transferred into an
i
-line photoresist. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.1942636 |