Surface passivation of InAs(001) with thioacetamide

We describe the passivation of InAs(001) surfaces with thioacetamide ( CH 3 CSNH 2 or TAM) as an alternative to the standard sulfur passivation using inorganic sulfide ( NH 4 ) 2 S x . Quantitative comparison using x-ray photoelectron spectroscopy (XPS) demonstrates that TAM passivation dramatically...

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Bibliographic Details
Published in:Applied physics letters 2005-06, Vol.86 (24), p.242105-242105-3
Main Authors: Petrovykh, D. Y., Long, J. P., Whitman, L. J.
Format: Article
Language:English
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Summary:We describe the passivation of InAs(001) surfaces with thioacetamide ( CH 3 CSNH 2 or TAM) as an alternative to the standard sulfur passivation using inorganic sulfide ( NH 4 ) 2 S x . Quantitative comparison using x-ray photoelectron spectroscopy (XPS) demonstrates that TAM passivation dramatically improves the stability against reoxidation in air compared with the inorganic sulfide, with little to no etching during the treatment. We find that TAM passivation preserves the intrinsic surface charge accumulation layer, as directly confirmed with laser-induced photoemission. Overall, TAM appears to provide superior passivation for electronic device and sensing applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1946182