Picosecond photoelectric characteristic in La0.7Sr0.3MnO3∕Si p-n junctions

Ultrafast photoelectric effects have been observed in La0.7Sr0.3MnO3∕Si p-n junctions fabricated by laser molecular-beam epitaxy. The rise time was ∼210ps and the full width at half-maximum was ∼650ps for the photovoltaic pulse when the junction was irradiated by a 1064nm laser pulse of 25ps duratio...

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Bibliographic Details
Published in:Applied physics letters 2005-06, Vol.86 (24)
Main Authors: Lu, Hui-Bin, Jin, Kui-Juan, Huang, Yan-Hong, He, Meng, Zhao, Kun, Cheng, Bo-Lin, Chen, Zheng-Hao, Zhou, Yue-Liang, Dai, Sou-Yu, Yang, Guo-Zhen
Format: Article
Language:English
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Summary:Ultrafast photoelectric effects have been observed in La0.7Sr0.3MnO3∕Si p-n junctions fabricated by laser molecular-beam epitaxy. The rise time was ∼210ps and the full width at half-maximum was ∼650ps for the photovoltaic pulse when the junction was irradiated by a 1064nm laser pulse of 25ps duration. The photovoltaic sensitivity was as large as 435mV∕mJ for a 1064nm laser pulse. No such photovoltaic signal was observed with irradiation from a 10.6μm CO2 laser pulse. The results reveal that this phenomenon is an ultrafast photoelectric effect.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1946901